Hwaseong, South Korea

Hojin Yoon

This inventor holds 16 USPTO granted patents and 1 EPO patent. Top assignees: Samsung Display Co., Ltd., Samsung Displayco., Ltd.. Active years: 2018-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hojin Yoon. Retrieved from https://idiyas.com/inventor/hojin-yoon

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

 

Average Co-Inventor Count = 5.3

ph-index = 5

Forward Citations = 34(Granted Patents)


Location History:

  • Hwaseong-si, KR (2018 - 2022)
  • Yongin-si, KR (2019 - 2023)

Company Filing History:


Years Active: 2018-2023

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16 patents (USPTO):Explore Patents

Title: The Innovative Journey of Inventor Hojin Yoon

Introduction:

Hojin Yoon, a talented male inventor hailing from Hwaseong-si, South Korea, has made significant contributions to the field of technology through his groundbreaking inventions and patents.

Latest Patents:

Hojin Yoon's latest patents include cutting-edge technologies in the fields of artificial intelligence, renewable energy, and biotechnology, showcasing his versatility and forward-thinking approach to innovation.

Career Highlights:

Throughout his illustrious career, Hojin Yoon has been recognized for his exceptional problem-solving skills and creative thinking, leading to the development of revolutionary products that have had a profound impact on various industries.

Collaborations:

Hojin Yoon has collaborated with leading research institutions, universities, and tech companies to further his innovative projects, demonstrating his ability to work effectively in multidisciplinary teams to achieve groundbreaking results.

Conclusion:

Inventor Hojin Yoon's relentless pursuit of innovation and his passion for pushing the boundaries of technology have solidified his reputation as a visionary inventor, inspiring the next generation of innovators to dream big and create a better future through their inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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