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For the Inventor, By the Inventor

Redwood City, CA, United States of America

Hock C So

This inventor holds 48 USPTO granted patents and 1 EPO patent, primarily in Non-Volatile Memory. Top assignees: Sandisk Corporation, Invox Technology, Invoice Technology, Inc.. Active years: 1987-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hock C So. Retrieved from https://idiyas.com/inventor/hock-c-so

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 48

% Patents Active = 89.6

 

Average Co-Inventor Count = 2.7

ph-index = 28

Forward Citations = 3,212(Granted Patents)


Location History:

  • Milpitas, CA (US) (1987)
  • Redwood City, CA (US) (1992 - 2013)

Company Filing History:

goldMedal23 out of 1,339 
 
Sandisk Corporation
 patents
silverMedal12 out of 15 
 
Invox Technology
 patents
bronzeMedal7 out of 7 
 
Invoice Technology, Inc.
 patents
4. 3 out of 20 
 
Multi Level Memory Technology
 patents
5. 2 out of 4,334 
 
Altera Corporation
 patents
6. 1 out of 4,962 
 
Sandisk Technologies Inc.
 patents

Years Active: 1987-2013

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Areas of Expertise:
Non-Volatile Memory
Flash EEPROM
Power Consumption
Current Sensing
Analog Memory
Multi-Bit Storage
High Voltage Generation
Data Management
Charge Pump Circuit
Error Detection
Memory Architecture
Read/Write Operations
48 patents (USPTO):Explore Patents
1. 8406052 - High voltage generation and control in source-side injection programming of non-volatile memory (2013-03-26),
2. 7894263 - High voltage generation and control in source-side injection programming of non-volatile memory (2011-02-22),
3. 7606079 - Reducing power consumption during read operations in non-volatile storage (2009-10-20),
4. 7554844 - Integrated circuit with analog or multilevel storage cells and user-selectable sampling frequency (2009-06-30),
5. 7539060 - Non-volatile storage using current sensing with biasing of source and P-Well (2009-05-26),
6. 7532516 - Non-volatile storage with current sensing of negative threshold voltages (2009-05-12),
7. 7489554 - Method for current sensing with biasing of source and P-well in non-volatile storage (2009-02-10),
8. 7447079 - Method for sensing negative threshold voltages in non-volatile storage using current sensing (2008-11-04),
9. 7440327 - Non-volatile storage with reduced power consumption during read operations (2008-10-21),
10. 7397697 - Multi-bit-per-cell flash EEPROM memory with refresh (2008-07-08),
11. 7298670 - Integrated circuit with analog or multilevel storage cells and user-selectable sampling frequency (2007-11-20),
12. 7170781 - Multi-bit-per-cell flash EEPROM memory with refresh (2007-01-30),
13. 7106632 - Integrated circuit with analog or multilevel storage cells and user-selectable sampling frequency (2006-09-12),
14. 6898117 - Multi-bit-per-cell flash EEPROM memory with refresh (2005-05-24),
15. 6760262 - Charge pump circuit adjustable in response to an external voltage source (2004-07-06),

Title: The Innovative Journey of Hock C So

Introduction: Hock C So, a pioneering inventor based in Redwood City, CA, has made significant contributions to the field of technology through his groundbreaking inventions and patents.

Latest Patents: Hock C So's latest patents showcase his commitment to innovation, with a focus on cutting-edge technologies in the digital space, artificial intelligence, and renewable energy.

Career Highlights: Throughout his illustrious career, Hock C So has been at the forefront of technological advancements, leading research and development teams to create solutions that have revolutionized industries.

Collaborations: Hock C So has collaborated with top research institutions, leading companies, and visionary inventors to bring his ideas to life, fostering a culture of innovation and excellence in every project.

Conclusion: Hock C So's passion for innovation, coupled with his relentless drive to push the boundaries of what is possible, cements his legacy as a trailblazing inventor shaping the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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