The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2009
Filed:
Jun. 29, 2007
Hao Thai Nguyen, San Jose, CA (US);
Seungpil Lee, San Ramon, CA (US);
Man Lung Mui, Santa Clara, CA (US);
Shahzad Khalid, Union City, CA (US);
Hock SO, Redwood City, CA (US);
Prashanti Govindu, Santa Clara, CA (US);
Hao Thai Nguyen, San Jose, CA (US);
Seungpil Lee, San Ramon, CA (US);
Man Lung Mui, Santa Clara, CA (US);
Shahzad Khalid, Union City, CA (US);
Hock So, Redwood City, CA (US);
Prashanti Govindu, Santa Clara, CA (US);
SanDisk Corporation, Milpitas, CA (US);
Abstract
Current sensing is performed in a non-volatile storage device for a non-volatile storage element. A voltage is applied to a selected word line of the first non-volatile storage element, and source and p-well voltages are applied to a source and a p-well, respectively, associated with the non-volatile storage element. The source and p-well voltages are regulated at respective positive DC levels to avoid a ground bounce, or voltage fluctuation, which would occur if the source voltage at least was regulated at a ground voltage. A programming condition of the non-volatile storage element is determined by sensing a current in a NAND string of the non-volatile storage element. The sensing can occur quickly since there is no delay in waiting for the ground bounce to settle.