Hoang Tran

Title: The Innovations of Hoang Tran

Introduction

Hoang Tran is a notable inventor based in San Jose, CA. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a patented technology that enhances the performance of DMOS transistors.

Latest Patents

Hoang Tran holds a patent for a "Trenched DMOS transistor with lightly doped tub." This invention features a trenched DMOS transistor that significantly reduces on-resistance. The design includes a lightly doped P tub surrounding the P+ body region, which enhances avalanche breakdown. This innovation allows for decreased epitaxial layer resistivity, thereby reducing device on-resistance while achieving the desired breakdown voltage. The on-resistance is further minimized by incorporating a pre-initial oxidation implant, such as phosphorous for an N channel device or boron for a P channel device. This process creates a more heavily doped JFET or pinch region at the trench bottom and in the upper portion of the drift region. The N JFET region, which is P doped for a P channel device, is more heavily doped than the underlying epitaxial layer, effectively reducing on-resistance by increasing local doping concentration.

Career Highlights

Hoang Tran is currently employed at Siliconix Incorporated, where he continues to innovate in the semiconductor industry. His work has been instrumental in advancing the efficiency and performance of electronic devices.

Collaborations

Some of his notable coworkers include Fwu-Iuan Hshieh and Lih-Ying Ching. Their collaborative efforts contribute to the ongoing success and innovation at Siliconix Incorporated.

Conclusion

Hoang Tran's contributions to semiconductor technology through his patented inventions demonstrate his expertise and commitment to innovation. His work continues to influence the industry and improve electronic device performance.