This inventor holds 1 USPTO granted patent. Top assignee: National Institute of Advanced Industrial Science and Technology. Active years: 2012.
Company Filing History:
Years Active: 2012
Title: Hitoshi Tampo: Innovator in Optical Semiconductor Devices
Introduction
Hitoshi Tampo is a prominent inventor based in Ibaraki, Japan. He is known for his contributions to the field of optical semiconductor devices. His innovative work focuses on enhancing light emission efficiency in ZnO-based devices.
Latest Patents
Hitoshi Tampo holds a patent for a semiconductor device aimed at increasing the light emission efficiency of a ZnO-based optical semiconductor device. The structure of this device includes n-type ZnMgO (barrier layer), ZnMgO (active layer), and p-type ZnMgO (barrier layer). Light is emitted from the active layer when a voltage is applied between the electrodes formed on the barrier layers. By adjusting the values of x, y, and z in the device, it is possible to shift the light emission wavelength and enhance light emission efficiency. This optical semiconductor device is considered excellent for light-emitting applications.
Career Highlights
Hitoshi Tampo is affiliated with the National Institute of Advanced Industrial Science and Technology. His work has significantly impacted the development of optical semiconductor technologies. He has been recognized for his innovative approaches and contributions to the field.
Collaborations
Hitoshi Tampo has collaborated with notable colleagues, including Hajime Shibata and Koji Matsubara. Their teamwork has fostered advancements in semiconductor technology.
Conclusion
Hitoshi Tampo's work in optical semiconductor devices exemplifies innovation in enhancing light emission efficiency. His contributions continue to influence the field and pave the way for future advancements.