National Institute of Advanced Industrial Science and Technology

Hitoshi Tampo

Shigeru Niki

Koji Matsubara

Shogo Ishizuka

Akimasa Yamada

Keiichiro Sakurai

Hajime Shibata

An object of the present invention is to increase the light emission efficiency of a ZnO-based optical semiconductor device. An optical semiconductor device B has a structure which includes n-type ZnMgO (barrier layer)/ZnMgO (active layer)/p-type ZnMgO (barrier layer), and light is emitted from the active layer. Electrodesare respectively formed on barrier layers. By applying a voltage between the two electrodes, light is emitted from ZnO (active layer). Here, there are a relationship of x&#x3c;y and a relationship of x&#x3c;z. For instance, such values as x=0.1, y=0.15 and z=0.16 can be chosen. Otherwise, such values as x=0.15, y=0.25 and z=0.24 can be choose as well. In this case, by increasing the value x of the active layer, it is possible to shift its light emission wavelength to the shorter wavelength side. In addition, as shown in the above-described results, by increasing the value x, it is possible to enhance its light emission efficiency. For this reason, the optical semiconductor device is excellent as a light-emitting device.

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Ibaraki, Japan

Hitoshi Tampo