The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2012
Filed:
May. 13, 2008
Hajime Shibata, Ibaraki, JP;
Hitoshi Tampo, Ibaraki, JP;
Koji Matsubara, Ibaraki, JP;
Akimasa Yamada, Ibaraki, JP;
Keiichiro Sakurai, Ibaraki, JP;
Shogo Ishizuka, Ibaraki, JP;
Shigeru Niki, Ibaraki, JP;
Hajime Shibata, Ibaraki, JP;
Hitoshi Tampo, Ibaraki, JP;
Koji Matsubara, Ibaraki, JP;
Akimasa Yamada, Ibaraki, JP;
Keiichiro Sakurai, Ibaraki, JP;
Shogo Ishizuka, Ibaraki, JP;
Shigeru Niki, Ibaraki, JP;
Abstract
An object of the present invention is to increase the light emission efficiency of a ZnO-based optical semiconductor device. An optical semiconductor device B has a structure which includes n-type ZnMgO (barrier layer)/ZnMgO (active layer)/p-type ZnMgO (barrier layer), and light is emitted from the active layer. Electrodesare respectively formed on barrier layers. By applying a voltage between the two electrodes, light is emitted from ZnO (active layer). Here, there are a relationship of x<y and a relationship of x<z. For instance, such values as x=0.1, y=0.15 and z=0.16 can be chosen. Otherwise, such values as x=0.15, y=0.25 and z=0.24 can be choose as well. In this case, by increasing the value x of the active layer, it is possible to shift its light emission wavelength to the shorter wavelength side. In addition, as shown in the above-described results, by increasing the value x, it is possible to enhance its light emission efficiency. For this reason, the optical semiconductor device is excellent as a light-emitting device.