Akimasa Yamada

Title: Akimasa Yamada: Innovator in Semiconductor Technology

Introduction

Akimasa Yamada is a prominent inventor based in Ibaraki, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 8 patents. His work focuses on enhancing the efficiency and production methods of optical semiconductor devices.

Latest Patents

One of Yamada's latest patents is for a semiconductor device aimed at increasing the light emission efficiency of a ZnO-based optical semiconductor device. This invention features a structure that includes n-type ZnMgO (barrier layer), ZnMgO (active layer), and p-type ZnMgO (barrier layer). Light is emitted from the active layer when a voltage is applied between the electrodes formed on the barrier layers. The invention allows for the adjustment of light emission wavelengths by varying the composition of the active layer.

Another notable patent is a method and apparatus for producing semiconductor films with a chalcopyrite structure. This method involves cracking selenium with plasma to generate radical selenium, which is then utilized in the formation of the semiconductor film.

Career Highlights

Yamada has worked at the National Institute of Advanced Industrial Science and Technology, where he has contributed to various research projects and innovations in semiconductor technology. His expertise has led to advancements that benefit the industry and enhance the performance of semiconductor devices.

Collaborations

Throughout his career, Yamada has collaborated with notable colleagues such as Shigeru Niki and Koji Matsubara. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Akimasa Yamada's contributions to semiconductor technology are noteworthy, with a focus on improving light emission efficiency and production methods. His patents reflect a commitment to advancing the field and enhancing the capabilities of optical semiconductor devices.