Miyagi, Japan

Hitoshi Morinaga

This inventor holds 13 USPTO granted patents and 1 published patent application and 1 EPO patent. Top assignees: Mitsubishi Chemical Corporation, Tohoku University, Foundation for Advancement of International Science. Active years: 1999-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hitoshi Morinaga. Retrieved from https://idiyas.com/inventor/hitoshi-morinaga-bccsug2a

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 13 

% Patents Active = 46.2


Average Co-Inventor Count = 2.1

ph-index = 6

Forward Citations = 123(Granted Patents)


Location History:

  • Yahatanishi-ku, JP (1999)
  • Kurosakishiroishi, JP (2001)
  • Fukuoka, JP (2000 - 2007)
  • Kitakyushu, JP (2001 - 2009)
  • Miyagi, JP (2012)
  • Sendai, JP (2012)
  • Miyaga, JP (2016)

Company Filing History:


Years Active: 1999-2016

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13 patents (USPTO):Explore Patents

Title: Hitoshi Morinaga: Innovator in Metal Oxide Films and Semiconductor Technology

Introduction

Hitoshi Morinaga is a prominent inventor based in Miyagi, Japan, known for his significant contributions to the fields of metal oxide films and semiconductor technology. With a total of 13 patents to his name, Morinaga has developed innovative solutions that enhance the performance and reliability of various materials and devices.

Latest Patents

Among his latest patents is a groundbreaking invention related to a metal oxide film, which is particularly suitable for the protection of metals. This film is primarily composed of aluminum and has a thickness of 10 nm or greater. It exhibits a moisture release rate from the film of 1E18 mol./cm or less. Additionally, Morinaga has developed a process for producing this metal oxide film through anodic oxidation in a chemical solution with a pH value of 4 to 10. Another notable patent involves a semiconductor device manufacturing method that reduces microroughness on semiconductor surfaces. This method involves surface treatment with a liquid while shielding the semiconductor surface from light, thereby improving electrical characteristics and yield during wet processes such as cleaning, etching, and development.

Career Highlights

Hitoshi Morinaga has had a distinguished career, working with leading organizations such as Mitsubishi Chemical Corporation and Tohoku University. His work has significantly impacted the development of advanced materials and semiconductor technologies, making him a key figure in his field.

Collaborations

Throughout his career, Morinaga has collaborated with notable colleagues, including Yasuhiro Kawase and Masaya Fujisue. These collaborations have further enriched his research and innovation efforts.

Conclusion

Hitoshi Morinaga's contributions to the fields of metal oxide films and semiconductor technology exemplify his innovative spirit and dedication to advancing material science. His patents reflect a commitment to improving the performance and reliability of essential technologies.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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