Mitsubishi Chemical Corporation

Tohoku University

Foundation for Advancement of International Science

Nihon Ceratec Co., Ltd.

Hitoshi Morinaga

Yasuhiro Kawase

Tadahiro Ohmi

Yasuyuki Shirai

Masafumi Kitano

Fumikazu Mizutani

Makoto Ishikawa

Masaya Fujisue

Makoto Ikemoto

Hideaki Mochizuki

Atsushi Itou

Yukio Kishi

Makoto c/o Mitsubishi Chemical Corp Ikemoto

A metal oxide film suitable for protection of metals, composed mainly of aluminum. A metal oxide film includes a film of an oxide of a metal composed mainly of aluminum, having a thickness of 10 nm or greater, and exhibiting a moisture release rate from the film of 1E18 mol./cmor less. Further, there is provided a process for producing a metal oxide film, wherein a metal composed mainly of aluminum is subjected to anodic oxidation in a chemical solution of 4 to 10 pH value so as to obtain a metal oxide film.

Metal oxide film, laminate, metal member and process for producing the same

Surface treatment is performed with a liquid, while shielding a semiconductor surface from light. When the method is employed for surface treatment in wet processes such as cleaning, etching and development of the semiconductor surface, increase of surface microroughness can be reduced. Thus, electrical characteristics and yield of the semiconductor device are improved.

Semiconductor device manufacturing method and method for reducing microroughness of semiconductor surface

A protective film structure of a metal member for use in an apparatus for manufacturing a semiconductor or the like, the protective film structure including a first coating layer of faultless aluminum oxide formed by direct anodic oxidation of a base-material metal of an aluminum alloy; and a second coating layer formed on the first coating layer and made of yttrium oxide by a plasma spraying method.

Protective film structure of metal member, metal component employing protective film structure, and equipment for producing semiconductor or flat-plate display employing protective film structure

A cleaning solution for cleaning a substrate for semiconductor devices and a cleaning method using the said cleaning solution, which comprises at least the following components (A), (B) and (C):

Cleaning solution for cleaning substrate for semiconductor devices and cleaning method using the same

To provide a cleaning solution for a substrate for a semiconductor device capable of removing particle contamination, organic contamination and metal contamination at the same time without corroding the substrate surface, and further having good water rinsability and capable of making the substrate surface highly clean in a short time, and a cleaning method.

Cleaning solution for substrate for semiconductor device and cleaning method

A substrate surface cleaning liquid medium and a cleaning method using the cleaning liquid medium are capable of removing finely particulate contaminants more efficiently than conventional techniques from substrates for devices in the production of semiconductor devices, display devices, etc., which cleaning liquid medium contains the following ingredients (A), (B), (C), and (D), has a pH of 9 or higher, and a content of ingredient (C) of 0.01 to 4% by weight:

Semiconductor cleaning composition comprising an ethoxylated surfactant

A highly efficient method for cleaning a substrate, whereby in the cleaning of the substrate, {circle around (1)} in a short time, {circle around (2)} both particle contaminants and metal contaminants can be removed, and {circle around (3)} a problem associated therewith, such as re-deposition of contaminants or a dimensional change due to etching, can be remarkably reduced, and which has the following characteristics. A method for cleaning a surface of a substrate, which comprises at least the following steps (1) and (2), wherein the step (2) is carried out after carrying out the step (1): Step (1): A cleaning step of cleaning the surface of the substrate with an alkaline cleaning agent containing a completing agent, and Step (2): A cleaning step employing a cleaning agent having a hydrofluoric acid content C (wt %) of from 0.03 to 3 wt %, wherein the cleaning time t (seconds) of the substrate with said cleaning agent is at most 45 seconds, and C and t satisfy the relationship of 0.25&#x2266;tC&#x2266;5.

Method for cleaning a surface of a substrate

A method for treating the surface of a substrate with a surface treatment composition, wherein the surface treatment composition comprises a liquid medium containing a complexing agent as a metal deposition preventive, the complexing agent comprising at least one member selected from Group A complexing agents and at least one member selected from Group B complexing agents as defined hereinafter.

Method for treating surface of substrate and surface treatment composition used for the same

A method for treating the surface of a substrate with a surface treatment composition, wherein the surface treatment composition comprises a liquid medium containing a complexing agent as a metal deposition preventive, the complexing agent comprising at least one member selected from Group A complexing agents and at least one member selected from Group B complexing agents defined hereinafter.

A surface treatment composition containing a complexing agent as a metal deposition preventive in a liquid medium, in which the complexing agent is an ethylenediaminephenol derivative of the following general formula (1) or its salt:

Surface treatment composition and method for treating surface of substrate by using the same

A surface treatment composition containing a complexing agent as a metal deposition preventive in a liquid medium, in which the complexing agent is an ethylenediaminephenol derivative of the following general formula (1) or its salt: ##STR1## wherein X.sub.1 and X.sub.2 are hydroxyl groups; Y.sub.1 to Y.sub.8 are respectively independently a hydrogen atom, a hydroxyl group, a halogen atom, a carboxyl group, a phosphonic acid group, a sulfonic acid group, a carbonyl group, a nitro group, a nitroso group, an amino group, an imino group, a nitrilo group, a nitrile group, a thiocyanate group, a hydroxyamino group, a hydroxyimino group, or an alkyl or alkoxy group which may have a substituent, provided that at least one of Y.sub.1 to Y.sub.8 is not a hydrogen atom; Z.sub.1 to Z.sub.4 are respectively independently a hydrogen atom, a carboxyl group or a sulfonic acid group; and R.sub.1 to R.sub.4 are respectively independently a hydrogen atom or an alkyl group which may have a substituent.

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Miyagi, Japan

Hitoshi Morinaga