Berlin, Germany

Hitoshi Ishikawa

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Atotech Deutschland Gmbh. Active years: 2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hitoshi Ishikawa. Retrieved from https://idiyas.com/inventor/hitoshi-ishikawa-ipnfu9s2

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

 

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2018

Loading Chart...
Loading Chart...
1 patent (USPTO):Explore Patents

Title: Hitoshi Ishikawa: Innovator in Metal Layer Formation

Introduction

Hitoshi Ishikawa is a notable inventor based in Berlin, Germany. He has made significant contributions to the field of substrate manufacturing, particularly in the formation of metal layers. His innovative approach has led to the development of a unique patent that enhances the quality and efficiency of printed circuit boards.

Latest Patents

Hitoshi Ishikawa holds a patent titled "Method of forming a metal layer and method of manufacturing a substrate having such metal layer." This patent describes a process involving multiple treatments to improve the adhesion and quality of metal layers on substrates. The process includes treatment with an alkali metal hydroxide solution, an alkaline aqueous solution containing an aliphatic amine, and several other sequential treatments, culminating in copper electroplating. He has 1 patent to his name.

Career Highlights

Ishikawa is currently employed at Atotech Deutschland GmbH, a company known for its expertise in surface finishing and specialty chemicals. His work at Atotech has allowed him to apply his innovative ideas in a practical setting, contributing to advancements in the manufacturing processes of electronic components.

Collaborations

Throughout his career, Hitoshi has collaborated with esteemed colleagues such as Tadahiro Nishigawa and Jun Higuchi. These collaborations have fostered a creative environment that encourages the exchange of ideas and the development of cutting-edge technologies.

Conclusion

Hitoshi Ishikawa's contributions to the field of substrate manufacturing and metal layer formation are noteworthy. His innovative patent and work at Atotech Deutschland GmbH highlight his commitment to advancing technology in the electronics industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…