Hisatoshi Furubayashi

This inventor holds 12 USPTO granted patents. Top assignees: Sharp Kabushiki Kaisha Corporation, Emi, LLC. Active years: 1985-1994.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hisatoshi Furubayashi. Retrieved from https://idiyas.com/inventor/hisatoshi-furubayashi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 12

% Patents Active = 100.0

Average Co-Inventor Count = 2.8

ph-index = 8

Forward Citations = 136(Granted Patents)

Location History:

Yamatokouriyama, JP (1991)
Yamatokoriyama, JP (1985 - 1992)
Nara, JP (1987 - 1994)

Company Filing History:

12 out of 25,954

Sharp Kabushiki Kaisha Corporation

where one patent can have more than one assignee

Years Active: 1985-1994

Loading Chart...

12 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 5310610 - Silicon micro sensor and manufacturing method therefor (1994-05-10),

2. 5108193 - Thermal flow sensor (1992-04-28),

3. 5087480 - Method for manufacturing a moisture permeable electrode in a moisture (1992-02-11),

4. 5048336 - Moisture-sensitive device (1991-09-17),

5. 5004700 - Humidity sensor (1991-04-02),

6. 4805296 - Method of manufacturing platinum resistance thermometer (1989-02-21),

7. 4651121 - Moisture sensor and a method for the production of the same (1987-03-17),

8. 4649365 - Platinum resistor for the measurement of temperatures (1987-03-10),

9. 4632879 - Moisture sensor (1986-12-30),

10. 4558393 - Moisture sensor (1985-12-10),

11. 4515653 - Method for production of a moisture sensor (1985-05-07),

12. 4496931 - Moisture permeable electrode in a moisture sensor (1985-01-29),

Title: Hisatoshi Furubayashi: Innovator in Silicon Micro Sensors

Introduction

Hisatoshi Furubayashi is a prominent inventor based in Yamatokoriyama, Japan. He has made significant contributions to the field of micro sensors, holding a total of 12 patents. His work focuses on innovative technologies that enhance the functionality and efficiency of silicon-based devices.

Latest Patents

Among his latest patents is a silicon micro sensor and its manufacturing method. This invention features a silicon substrate with a support element formed over an etched portion, incorporating a double-layered structure. The structure includes a silicon oxide film created through thermal oxidization and an aluminum oxide film deposited via sputtering. Another notable patent is a thermal flow sensor, which consists of an etchable substrate, an electrical insulating film with distinct etching characteristics, and strategically placed heating and fluid temperature sensing resistors.

Career Highlights

Furubayashi has worked with notable companies, including Sharp Corporation and Emi, LLC. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking advancements in sensor technology.

Collaborations

He has collaborated with esteemed colleagues such as Masaya Hijikigawa and Junichi Tanaka, further enhancing the innovative potential of his projects.

Conclusion

Hisatoshi Furubayashi's contributions to the field of micro sensors exemplify his dedication to innovation and technology. His patents reflect a commitment to advancing the capabilities of silicon-based devices, making a lasting impact in the industry.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]