Ibaraki, Japan

Hisato Michikoshi

USPTO Granted Patents = 10 

Average Co-Inventor Count = 1.4

ph-index = 2

Forward Citations = 63(Granted Patents)


Location History:

  • Ibaraki, JP (2019 - 2023)
  • Osaka, JP (1995 - 2024)

Company Filing History:


Years Active: 1995-2024

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10 patents (USPTO):Explore Patents

Title: Hisato Michikoshi: Innovator in Semiconductor Technology

Introduction

Hisato Michikoshi is a prominent inventor based in Ibaraki, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 10 patents. His work has been instrumental in advancing the capabilities and efficiency of semiconductor devices.

Latest Patents

Among his latest innovations, Michikoshi has developed a semiconductor device that features a first semiconductor chip with electrodes on both surfaces, and a second semiconductor chip with similar configurations. This design includes a unique electrode plate arrangement that enhances the device's performance. Additionally, he has created a silicon carbide semiconductor device that incorporates a metal plate and insulating film, optimizing the bonding of electrodes to improve functionality.

Career Highlights

Hisato Michikoshi is currently employed at Sumitomo Electric Industries, Limited, where he continues to push the boundaries of semiconductor technology. His expertise and innovative spirit have led to numerous advancements in the industry.

Collaborations

Throughout his career, Michikoshi has collaborated with notable colleagues such as Hiroshi Notsu and Yoshiki Kuhara. These partnerships have fostered a creative environment that encourages the development of groundbreaking technologies.

Conclusion

Hisato Michikoshi's contributions to semiconductor technology exemplify the impact of innovation in modern electronics. His patents and collaborative efforts continue to shape the future of the industry.

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