The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 22, 2021

Filed:

Dec. 12, 2017
Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventors:

Hiroshi Notsu, Ibaraki, JP;

Hisato Michikoshi, Ibaraki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/49 (2006.01); H01L 29/16 (2006.01); H01L 23/00 (2006.01); H01L 23/492 (2006.01);
U.S. Cl.
CPC ...
H01L 24/29 (2013.01); H01L 23/4924 (2013.01); H01L 29/1608 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/29139 (2013.01); H01L 2224/29147 (2013.01); H01L 2224/29155 (2013.01);
Abstract

A semiconductor device includes a semiconductor chip made of material containing silicon carbide, a base plate including a plate-shaped insulating body and metal layers disposed on opposite faces thereof, and a bonding material bonding the semiconductor chip on one face of the base plate, wherein the bonding material is made of a metal material whose post-bonding melting point is greater than or equal to 773° C., wherein a thickness of the bonding material is less than or equal to 50 micrometers, wherein a thickness of the base plate is greater than or equal to 500 micrometers, and wherein with a thickness of the insulating body being denoted as t, and a thickness of each of the metal layers being denoted as t, a value of t/tis greater than or equal to 4.3.


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