logo

For the Inventor, By the Inventor

Shibukawa, Japan

Hisashi Shimizu

This inventor holds 5 USPTO granted patents and 2 published patent applications. Top assignees: Kanto Denka Kogyo Co., Ltd., Kioxia Corporation. Active years: 2022-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hisashi Shimizu. Retrieved from https://idiyas.com/inventor/hisashi-shimizu-e8hsfpb2

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 5 

% Patents Active = 100.0

Average Co-Inventor Count = 2.5

ph-index = 1


Location History:

  • Shibukawa, JP (2022)
  • Gunma, JP (2023)

Company Filing History:

goldMedal5 out of 77 
 
Kanto Denka Kogyo Co., Ltd.
 patents
silverMedal1 out of 3,189 
 
Kioxia Corporation
 patents
where one patent can have more than one assignee

Years Active: 2022-2025

Loading Chart...
5 patents (USPTO):Explore Patents
1. 12261050 - Method of manufacturing semiconductor device, and etching gas (2025-03-25),
2. 11814561 - Dry etching gas composition comprising sulfur-containing fluorocarbon compound having unsaturated bond and dry etching method using the same (2023-11-14),
3. 11795397 - Dry etching gas composition comprising sulfur-containing fluorocarbon compound and dry etching method using the same (2023-10-24),
4. 11795396 - Dry etching gas composition comprising sulfur-containing fluorocarbon compound having unsaturated bond and dry etching method using the same (2023-10-24),
5. 11437244 - Dry etching gas composition and dry etching method (2022-09-06),

Title: Hisashi Shimizu: Innovator in Semiconductor Technology

Introduction

Hisashi Shimizu is a prominent inventor based in Shibukawa, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on innovative methods for manufacturing semiconductor devices and etching processes.

Latest Patents

Among Hisashi Shimizu's latest patents is a method of manufacturing a semiconductor device that utilizes an etching gas comprising a chain hydrocarbon compound expressed as CHF. In this method, the CHF compound is characterized by terminal carbon atoms bonded exclusively to fluorine atoms. Another notable patent involves a dry etching gas composition that includes a sulfur-containing fluorocarbon compound with an unsaturated bond, which is particularly useful for etching silicon-based films.

Career Highlights

Throughout his career, Hisashi Shimizu has worked with notable companies such as Kanto Denka Kogyo Co., Ltd. and Kioxia Corporation. His expertise in semiconductor technology has positioned him as a key figure in the industry.

Collaborations

Hisashi Shimizu has collaborated with talented individuals, including Korehito Kato and Takaya Ishino, contributing to advancements in semiconductor manufacturing and etching techniques.

Conclusion

Hisashi Shimizu's innovative work in semiconductor technology and his contributions to the field through his patents highlight his importance as an inventor. His ongoing efforts continue to shape the future of semiconductor manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…