Kanto Denka Kogyo Co., Ltd.

Kioxia Corporation

Hisashi Shimizu

Korehito Kato

Toshiyuki Sasaki

Yoshihiko Iketani

Yukinobu Shibusawa

Takaya Ishino

Mitsuharu Shimoda

In one embodiment, a method of manufacturing a semiconductor device includes etching a film with etching gas that includes a chain hydrocarbon compound expressed as CHFwhere C, H and F respectively denote carbon, hydrogen and fluorine, 'x' denotes an integer of three or more, and “y” and “z” respectively denote integers of one or more. Furthermore, the CHFis the chain hydrocarbon compound in which each of terminal carbon atoms on a carbon chain of the chain hydrocarbon compound is bonded only to fluorine atoms out of hydrogen and fluorine atoms.

Method of manufacturing semiconductor device, and etching gas

Provided is a novel etching gas composition that comprises a sulfur-containing unsaturated compound and that is useful for etching a stacked structure of silicon-based films. A dry etching gas composition comprises a sulfur-containing fluorocarbon compound that has an unsaturated bond and that is represented by general formula (1) of CFSwhere x, y, and z are 2&#x2264;x&#x2264;5, y&#x2264;2x, and 1&#x2264;z&#x2264;2.

Dry etching gas composition comprising sulfur-containing fluorocarbon compound having unsaturated bond and dry etching method using the same

Provided is a novel etching gas composition that comprises a sulfur-containing compound and that can selectively etch SiOover low dielectric constant materials (low-k materials; SiON, SiCN, SiOCN, SiOC). A dry etching gas composition comprises a saturated and cyclic sulfur-containing fluorocarbon compound that is represented by general formula (1) of CFSwhere x, y, and z are 2&#x2264;x&#x2264;5, y&#x2264;2x, and 1&#x2264;z&#x2264;2.

Dry etching gas composition comprising sulfur-containing fluorocarbon compound and dry etching method using the same

A dry etching gas composition is used which contains a saturated or unsaturated hydrofluorocarbon compound (excluding 1,2,2,3-pentafluorocyclobutane and 1,1,2,2-tetrafluorocyclobutane) represented by a general formula (1):CxHyFz(where x, y, and z are integers that satisfy 2&#x2264;x&#x2264;4, y+z&#x2264;2x+2, and 0.5&#x3c;z/y&#x3c;2). Use of the etching gas composition containing the above-described hydrofluorocarbon makes it possible to selectively etch a nitrogen-containing silicon-based film (b1) with respect to a silicon oxide film, a non-silicon-based mask material, or a polycrystalline silicon film.

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Shibukawa, Japan

Hisashi Shimizu