The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2023
Filed:
Jan. 18, 2022
Applicant:
Kanto Denka Kogyo Co., Ltd., Tokyo, JP;
Inventors:
Hisashi Shimizu, Gunma, JP;
Korehito Kato, Gunma, JP;
Assignee:
KANTO DENKA KOGYO CO., LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); C09K 13/00 (2006.01); H01L 21/311 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
C09K 13/00 (2013.01); H01L 21/3065 (2013.01); H01L 21/31116 (2013.01); H01J 37/3244 (2013.01); H01J 2237/334 (2013.01);
Abstract
Provided is a novel etching gas composition that comprises a sulfur-containing compound and that can selectively etch SiOover low dielectric constant materials (low-k materials; SiON, SiCN, SiOCN, SiOC). A dry etching gas composition comprises a saturated and cyclic sulfur-containing fluorocarbon compound that is represented by general formula (1) of CFSwhere x, y, and z are 2≤x≤5, y≤2x, and 1≤z≤2.
Shimizu, Hisashi. (2023). Dry etching gas composition comprising sulfur-containing fluorocarbon compound and dry etching method using the same (U.S. Patent No. 11795397). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11795397
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile