Hisashi Katahama

Title: Hisashi Katahama: Innovator in Silicon Technology

Introduction

Hisashi Katahama is a prominent inventor based in Saga, Japan. He is known for his significant contributions to the field of silicon technology, particularly in the development of silicon single crystals and wafers. His work has implications for large-scale integrated devices, making him a key figure in the semiconductor industry.

Latest Patents

Hisashi Katahama holds 1 patent related to silicon single crystals, silicon wafers, and epitaxial wafers. The patent describes a method for producing silicon single crystals that are suitable for epitaxial wafers. These crystals are grown with nitrogen doping at specific concentrations, ensuring a sufficient gettering effect for large-scale integrated devices. The silicon wafers are produced by slicing from the silicon single crystal, and an epitaxial layer is grown on the surface to create the epitaxial wafer. This innovation provides an epitaxial wafer that has no defects in the device-active region and an excellent gettering effect without the need for extrinsic or intrinsic gettering treatment.

Career Highlights

Katahama is associated with Sumitomo Mitsubishi Silicon Corporation, where he has made significant advancements in silicon technology. His expertise in the field has positioned him as a valuable asset to the company and the industry at large.

Collaborations

Hisashi Katahama has collaborated with notable colleagues such as Masataka Horai and Shigeru Umeno. Their combined efforts have contributed to advancements in silicon technology and the development of innovative solutions for the semiconductor industry.

Conclusion

Hisashi Katahama's work in silicon technology exemplifies the importance of innovation in the semiconductor field. His contributions have paved the way for advancements that enhance the performance of large-scale integrated devices.