Sumitomo Mitsubishi Silicon Corporation

Hisashi Katahama

Shigeru Umeno

Yasuo Koike

Shinsuke Sadamitsu

Eiichi Asayama

Masataka Horai

Kouji Sueoka

There are provided silicon single crystal, silicon wafer, and epitaxial wafer having a sufficient gettering effect suitable for a large-scale integrated device. The silicon single crystal which is suitable for an epitaxial wafer is grown with nitrogen doping at a concentration of 1&times;10 atoms/cm or more, or with nitrogen doping at a concentration of 1&times;10 atoms/cm and carbon doping at a concentration of 0.1&times;10 &minus;5&times;10 atoms/cm and/or boron doping at a concentration of 1&times;10 atoms/cm or more. The silicon wafer is produced by slicing from the silicon single crystal, and an epitaxial layer is grown on a surface of the silicon wafer to produce the epitaxial wafer. The present invention provides an epitaxial wafer for a large-scale integrated device having no defects in a device-active region and having an excellent gettering effect without performance of an extrinsic or intrinsic gettering treatment.

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Saga, Japan

Hisashi Katahama