Company Filing History:
Years Active: 1998-2002
Title: Hisao Kobashi: Innovator in Semiconductor Technology
Introduction
Hisao Kobashi is a prominent inventor based in Hyogo, Japan, known for his contributions to semiconductor technology. With a total of 4 patents, Kobashi has made significant advancements in the field, particularly in improving the performance and reliability of semiconductor memory devices.
Latest Patents
One of his latest patents is a semiconductor memory device with an improved defect elimination rate. This invention involves setting a test mode signal during a burn-in test, allowing for the activation of word lines through composite gates. This method enhances the potential difference and high electric field between word lines, thereby improving the defect elimination rate during testing. Another notable patent is a semiconductor memory device that includes a spare memory cell. This design features a redundancy row decoder in a DRAM, which utilizes multiple N channel MOS transistors to reduce leakage current, enhancing the overall efficiency of the device.
Career Highlights
Kobashi is associated with Mitsubishi Denki Kabushiki Kaisha, a leading company in the electronics sector. His work has been instrumental in advancing semiconductor technologies, contributing to the company's reputation for innovation and quality.
Collaborations
Throughout his career, Kobashi has collaborated with notable colleagues, including Mikio Sakurai and Susumu Tanida. These partnerships have fostered a creative environment that has led to the development of groundbreaking technologies in the semiconductor industry.
Conclusion
Hisao Kobashi's contributions to semiconductor technology exemplify the impact of innovative thinking in the field. His patents reflect a commitment to enhancing device performance and reliability, solidifying his status as a key figure in the industry.