The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 1998
Filed:
Jan. 13, 1997
Applicant:
Inventors:
Hisao Kobashi, Hyogo, JP;
Yasuhiko Tsukikawa, Hyogo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365201 ; 365200 ; 365203 ;
Abstract
A switching circuit for switching a bit line potential VBL of a DRAM to a power supply potential Vcc, an intermediate potential Vcc/2 or the ground potential GND is provided. In normal operation, the bit line potential VBL is set to Vcc/2. In a special write mode, Vcc or GND is applied to all the bit lines through an equalizer, a desired word line is raised to 'H' level, and Vcc or GND is written to the storage nodes of all the memory cells connected to the word line. It is possible to write Vcc or GND even to the storage node of a memory cell which has been replaced by a redundant memory cell.