The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2002
Filed:
Jul. 13, 2000
Applicant:
Inventors:
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 ;
U.S. Cl.
CPC ...
G11C 7/00 ;
Abstract
During a burn-in test, a test mode signal TMRS is set to the H level, and word lines WL to WL can be activated by composite gates according to row address signals RA to RA , respectively. Therefore, a potential difference and a high electric field are provided even between word lines WL , WL during the burn-in test. Thus, the defect elimination rate during the burn-in test can be improved.
Hikiyama, Yoshiyuki. (2002). Semiconductor memory device with improved defect elimination rate (U.S. Patent No. 6392939). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6392939
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