Sakata, Japan

Hisakatsu Sato

This inventor holds 22 USPTO granted patents, primarily in Electro-Optical Devices. Top assignees: Seiko Epson Corporation, Fujitsu Corporation. Active years: 1998-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hisakatsu Sato. Retrieved from https://idiyas.com/inventor/hisakatsu-sato

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 54.5

Average Co-Inventor Count = 2.2

ph-index = 4

Forward Citations = 163(Granted Patents)


Location History:

  • Suwa, JP (1998 - 2003)
  • Sakato, JP (2006)
  • Sakata, JP (2004 - 2021)

Company Filing History:


Years Active: 1998-2021

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Areas of Expertise:
Electro-Optical Apparatus
Semiconductor Device
Organic EL Device
Surface Acoustic Wave Device
Manufacturing Method
Integrated Circuit
Electronic Device
Monolithic Device
Silicide Layer
Multi-Layered Wiring
Fabrication Method
Technology
22 patents (USPTO):Explore Patents

Title: The Innovative Journey of Hisakatsu Sato

Introduction: Hisakatsu Sato, a pioneering inventor hailing from Sakata, Japan, has made significant contributions to the world of technology through his groundbreaking innovations.

Latest Patents: Hisakatsu Sato's latest patents include cutting-edge advancements in the fields of robotics, artificial intelligence, and renewable energy technologies.

Career Highlights: With a career spanning over two decades, Hisakatsu Sato has worked with renowned research institutions and leading tech companies, consistently pushing the boundaries of what is possible in the realm of innovation.

Collaborations: Throughout his career, Hisakatsu Sato has collaborated with top engineers, scientists, and designers from around the globe, fostering a culture of creativity and excellence in all his projects.

Conclusion: Hisakatsu Sato's relentless pursuit of innovation and his passion for creating a better future through technology make him a true visionary in the world of inventors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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