The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2006
Filed:
Mar. 22, 2004
Applicants:
Hiroaki Tsugane, Sakata, JP;
Hisakatsu Sato, Sakato, JP;
Inventors:
Hiroaki Tsugane, Sakata, JP;
Hisakatsu Sato, Sakato, JP;
Assignee:
Seiko Epson Corporation, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
Embodiments of the present invention include a method for manufacturing a semiconductor device and a semiconductor device, in which, when a DRAM and a MOS field effect transistor that becomes a component of a logic circuit are mix-mounted on the same chip, the DRAM and the MOS field effect transistor can be provided with designed performances. After a capacitorof the DRAM is formed, silicide layersandare formed over Ntype source/drain regionsandof MOS field effect transistorsandthat are located in peripheral circuit regionand logic circuit region