Kawasaki, Japan

Hiroyuki Uesugi

This inventor holds 2 USPTO granted patents. Top assignees: Fujitsu Corporation, Fujitsu Semiconductor Limited. Active years: 1996-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiroyuki Uesugi. Retrieved from https://idiyas.com/inventor/hiroyuki-uesugi-8ppldqih

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 50.0

Average Co-Inventor Count = 1.6

ph-index = 1

Forward Citations = 21(Granted Patents)


Company Filing History:


Years Active: 1996-2013

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2 patents (USPTO):Explore Patents

Title: Hiroyuki Uesugi: Innovator in Semiconductor Technology

Introduction

Hiroyuki Uesugi is a prominent inventor based in Kawasaki, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on advanced methods for film formation and semiconductor device manufacturing.

Latest Patents

Uesugi's latest patents include a chemical vapor deposition apparatus and a film forming method. One of his notable inventions involves a method of manufacturing a semiconductor device by forming a TiN film on a base material using a Metal-Organic Chemical Vapor Deposition (MOCVD) method. In this process, a space between a showerhead and a trapping member is heated to a temperature sufficient for the thermal decomposition of TDMAT. The source gas containing TDMAT is then emitted into a chamber, where it decomposes into TiN, carbon, and hydrocarbon. The TiN film grows on the base material, while the carbon and hydrocarbon are trapped by the trapping member, ensuring a pure TiN film formation.

Another significant patent involves the formation of a planarized insulating film through plasma-enhanced CVD. This method includes preparing a semiconductor substrate with surface irregularities and generating plasma using organic silicon with silazane bonding and an oxidant. The deposition occurs at a substrate temperature not exceeding 100 degrees Celsius, allowing for effective film formation.

Career Highlights

Hiroyuki Uesugi has worked with notable companies such as Fujitsu Semiconductor Limited and Fujitsu Corporation. His experience in these organizations has allowed him to develop and refine his innovative techniques in semiconductor manufacturing.

Collaborations

Uesugi has collaborated with esteemed colleagues, including Yumiko Hamada and Hidetoshi Nishio. Their combined expertise has contributed to advancements in semiconductor technology.

Conclusion

Hiroyuki Uesugi's contributions to semiconductor technology through his innovative patents and collaborations highlight his role as a key inventor in the field. His work continues to influence the development of advanced semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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