The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 1996
Filed:
Jun. 03, 1994
Applicant:
Inventors:
Hidetoshi Nishio, Kawasaki, JP;
Takako Furuse, Kawasaki, JP;
Yumiko Hamada, Kawasaki, JP;
Hiroyuki Uesugi, Kawasaki, JP;
Assignee:
Fujitsu Limited, , JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437228 ; 437235 ; 437238 ;
Abstract
A method of manufacturing a semiconductor device including the steps of: preparing a semiconductor substrate having convexities and concavities on the surface thereof; and generating plasma by using organic silicon having silazane bonding and oxidant and depositing a planarized insulating film on the semiconductor substrate by plasma chemical vapor deposition. The organic silicon may be HMCTSZ and the substrate temperature during deposition is preferably not higher than about 100.degree. C., e.g. 50.degree. C.