Tokyo, Japan

Hiroyasu Nohsoh


Average Co-Inventor Count = 2.6

ph-index = 3

Forward Citations = 23(Granted Patents)


Location History:

  • Hyogo, JP (2001 - 2003)
  • Tokyo, JP (2004)

Company Filing History:


Years Active: 2001-2004

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3 patents (USPTO):Explore Patents

Title: Hiroyasu Nohsoh: Innovator in Semiconductor Technology

Introduction

Hiroyasu Nohsoh is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on innovative designs and methods that enhance the functionality and efficiency of semiconductor devices.

Latest Patents

Nohsoh's latest patents include a semiconductor device, a semiconductor device pattern designing method, and a semiconductor device pattern designing apparatus. The pattern designing apparatus allows for the design of patterns to be included in a multi-layer wiring structure of a semiconductor device, layer by layer. Functional patterns necessary for implementing the functions of the semiconductor device are formed first. Following this, a plurality of types of dummy patterns of different sizes are designed in free regions not occupied by the functional patterns. The design process involves extracting the largest possible number of free regions, followed by smaller free regions, where the dummy patterns are laid out.

Another notable patent is for a dual gate CMOS device. This invention includes a silicon substrate with a trench in the main surface and a gate electrode comprising a polysilicon film and a tungsten silicide film formed above the main surface via a gate insulating film. The polysilicon film features a first part doped with p-type impurities, a second part doped with n-type impurities, and a connection part that links the two within the trench. Additionally, part of the tungsten silicide film located above the connection part is removed to enhance device performance.

Career Highlights

Throughout his career, Hiroyasu Nohsoh has worked with notable companies such as Renesas Technology Corporation and Mitsubishi Electric Corporation. His experience in these organizations has allowed him to develop and refine his expertise in semiconductor technology.

Collaborations

Nohsoh has collaborated with esteemed colleagues, including Shinya Soeda and Atsushi Hachisuka. Their combined efforts have contributed to advancements in semiconductor design and functionality.

Conclusion

Hiroyasu Nohsoh's innovative work in semiconductor technology has led to significant advancements in the field. His patents reflect a deep understanding of semiconductor design, and his collaborations with industry professionals further enhance his contributions. His ongoing efforts continue to shape the future of semiconductor devices.

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