The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2004
Filed:
Apr. 25, 2000
Applicant:
Inventors:
Assignee:
Renesas Technology Corp., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/348 ; H01L 2/352 ; H01L 2/940 ;
U.S. Cl.
CPC ...
H01L 2/348 ; H01L 2/352 ; H01L 2/940 ;
Abstract
Patterns to be included in a multi-layer wiring structure of a semiconductor device are designed layer by layer. Functional patterns necessary for implementing functions of the semiconductor device are formed first. A plurality of types of dummy patterns and having different sizes are then designed in free regions not occupied by the functional patterns. While the dummy patterns are being designed, the largest possible number of free regions are extracted followed by as many smaller free regions as possible. The dummy patterns are laid out in the extracted free regions.