The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2003
Filed:
May. 01, 2001
Applicant:
Inventors:
Hiroyasu Nohsoh, Hyogo, JP;
Shinya Soeda, Hyogo, JP;
Assignee:
Renesas Technology Corp., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/976 ;
Abstract
A dual gate type CMOS device according to the present invention includes a silicon substrate having a trench in the main surface and a gate electrode including a polysilicon film and a tungsten silicide film formed above the main surface via a gate insulating film. The polysilicon film has a first part into which p type impurities are doped, a second part into which n type impurities are doped and a connection part which connects the first part and the second part within the trench, and part of the tungsten silicide film located above the connection part is removed.