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For the Inventor, By the Inventor

Nagasaki, Japan

Hiroshi Yoshihara

This inventor holds 6 USPTO granted patents and 1 published patent application. Top assignee: Sony Corporation. Active years: 2009-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiroshi Yoshihara. Retrieved from https://idiyas.com/inventor/hiroshi-yoshihara

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 6 

% Patents Active = 16.7

Average Co-Inventor Count = 2.9

ph-index = 2

Forward Citations = 16(Granted Patents)


Location History:

  • Yokohama, JP (2013)
  • Nagasaki, JP (2009 - 2014)

Company Filing History:

goldMedal6 out of 58,145 
 
Sony Corporation
 patents

Years Active: 2009-2014

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6 patents (USPTO):Explore Patents
1. 8780609 - Variable-resistance memory device and driving method thereof (2014-07-15),
2. 8638616 - Nonvolatile storage device having a plurality of plate electrodes (2014-01-28),
3. 8576608 - Memory apparatus (2013-11-05),
4. 8559253 - Variable-resistance memory device with charge sharing that discharges pre-charge voltage of a selected bit line to share charge with unselected bit lines (2013-10-15),
5. 8379430 - Memory device and method of reading memory device (2013-02-19),
6. 7542335 - Magnetic storage device using ferromagnetic tunnel junction element (2009-06-02),

Title: Hiroshi Yoshihara: Innovator in Memory Device Technology

Introduction

Hiroshi Yoshihara is a prominent inventor based in Nagasaki, Japan. He has made significant contributions to the field of memory device technology, holding a total of 6 patents. His work focuses on developing innovative solutions that enhance data storage and retrieval processes.

Latest Patents

Yoshihara's latest patents include a variable-resistance memory device and a nonvolatile storage device with multiple plate electrodes. The variable-resistance memory device features a memory array section that employs a storage element capable of reversible resistance changes based on applied signals. This design allows for efficient data recognition through a reference cell that generates a reference current. The nonvolatile storage device consists of several memory mats, each containing multiple memory cells, and is equipped with a control section that manages electrical charging and discharging operations among the plate electrodes.

Career Highlights

Hiroshi Yoshihara has built a successful career at Sony Corporation, where he has been instrumental in advancing memory technology. His innovative designs and patents have positioned him as a key figure in the industry, contributing to the development of cutting-edge storage solutions.

Collaborations

Yoshihara has collaborated with notable coworkers, including Makoto Kitagawa and Tsunenori Shiimoto. Their combined expertise has fostered a creative environment that encourages the development of groundbreaking technologies.

Conclusion

Hiroshi Yoshihara's contributions to memory device technology exemplify his dedication to innovation and excellence. His patents reflect a commitment to enhancing data storage capabilities, making a lasting impact in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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