The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2014

Filed:

Jul. 17, 2012
Applicants:

Hironobu Mori, Nagasaki, JP;

Hiroshi Yoshihara, Nagasaki, JP;

Inventors:

Hironobu Mori, Nagasaki, JP;

Hiroshi Yoshihara, Nagasaki, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A variable-resistance memory device includes a memory array section including a main memory cell employing a storage element having a resistance increasing and decreasing in a reversible manner in accordance with application of a signal set at one of different polarities to the opposite ends of the storage element, and a reference cell section including a reference cell provided with a storage element having a resistance increasing and decreasing in a reversible manner in accordance with application of a signal set at one of different polarities to the opposite ends of the storage element and generating a reference current used for recognizing data of the main memory cell. The direction of an applied current serving as the reference current is set in accordance with the resistance state of the reference cell.


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