The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2013
Filed:
Dec. 05, 2011
Tomohito Tsushima, Tokyo, JP;
Makoto Kitagawa, Kanagawa, JP;
Tsunenori Shiimoto, Kanagawa, JP;
Chieko Nakashima, Nagasaki, JP;
Hiroshi Yoshihara, Nagasaki, JP;
Kentaro Ogata, Nagasaki, JP;
Tomohito Tsushima, Tokyo, JP;
Makoto Kitagawa, Kanagawa, JP;
Tsunenori Shiimoto, Kanagawa, JP;
Chieko Nakashima, Nagasaki, JP;
Hiroshi Yoshihara, Nagasaki, JP;
Kentaro Ogata, Nagasaki, JP;
Sony Corporation, Tokyo, JP;
Abstract
A memory apparatus includes: a plurality of memory cells which includes a first resistance change element; and a read-out circuit which determines the size of a resistance value of the first resistance change element by comparing the resistance state of a memory cell selected among the plurality of memory cells to the resistance state of a reference memory cell, wherein the reference memory cell includes a second resistance change element, a resistance value of the second resistance change element with respect to an applied voltage is smaller than that in a high resistance state of the first resistance change element, and the second resistance change element shows the same resistance change characteristic as the first resistance change element.