Nagasaki, Japan

Kentaro Ogata

This inventor holds 3 USPTO granted patents. Top assignee: Sony Corporation. Active years: 2011-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kentaro Ogata. Retrieved from https://idiyas.com/inventor/kentaro-ogata

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.8

ph-index = 3

Forward Citations = 14(Granted Patents)


Company Filing History:


Years Active: 2011-2013

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3 patents (USPTO):Explore Patents

Title: Kentaro Ogata: Innovator in Memory Technology

Introduction

Kentaro Ogata is a prominent inventor based in Nagasaki, Japan. He has made significant contributions to the field of memory technology, holding a total of 3 patents. His work focuses on developing advanced memory devices that enhance data storage and retrieval processes.

Latest Patents

Ogata's latest patents include a variable-resistance memory device and its driving method. This innovative device features a memory cell that varies in resistance based on the polarity of the applied voltage during set or reset operations. Additionally, he has developed a memory apparatus that includes multiple memory cells and a read-out circuit. This circuit determines the resistance value of a selected memory cell by comparing it to a reference memory cell, ensuring accurate data retrieval.

Career Highlights

Kentaro Ogata is currently employed at Sony Corporation, where he continues to push the boundaries of memory technology. His work has been instrumental in advancing the capabilities of memory devices, making them more efficient and reliable.

Collaborations

Ogata collaborates with talented individuals such as Makoto Kitagawa and Tomohito Tsushima. Their combined expertise fosters innovation and drives the development of cutting-edge memory solutions.

Conclusion

Kentaro Ogata's contributions to memory technology exemplify his dedication to innovation. His patents reflect a commitment to enhancing data storage solutions, making a lasting impact in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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