Gunma, Japan

Hiroshi Tamura

USPTO Granted Patents = 4 


Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Location History:

  • Gunma-ken, JP (2010)
  • Gunma, JP (2012 - 2013)
  • Annaka, JP (2013)

Company Filing History:


Years Active: 2010-2013

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4 patents (USPTO):Explore Patents

Title: Hiroshi Tamura: Innovator in SOI Substrate Technology

Introduction

Hiroshi Tamura is a notable inventor based in Gunma, Japan, recognized for his contributions to the field of silicon-on-insulator (SOI) technology. With a total of four patents to his name, Tamura has made significant advancements in the manufacturing processes of transparent SOI substrates and wafers.

Latest Patents

Tamura's latest patents include a method for producing a transparent SOI substrate. This innovative method allows for the easy manufacturing of a substrate with a silicon film on one side and a rough main surface on the opposite side. The process involves roughening the surfaces to achieve specific surface roughness levels, ensuring optimal performance. Another significant patent is for a method of manufacturing an SOI wafer, which focuses on efficiently removing defects from ion-implanted layers. This method enhances substrate uniformity while also reducing costs and increasing throughput.

Career Highlights

Throughout his career, Hiroshi Tamura has worked with prominent companies, including Shin-Etsu Chemical Co., Ltd. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Tamura has collaborated with notable colleagues such as Makoto Kawai and Yoshihiro Kubota. These partnerships have likely fostered a creative environment that has led to further advancements in their respective fields.

Conclusion

Hiroshi Tamura's work in SOI technology exemplifies the impact of innovative thinking in the semiconductor industry. His patents reflect a commitment to improving manufacturing processes and enhancing product quality.

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