The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2013
Filed:
Apr. 01, 2009
Shoji Akiyama, Annaka, JP;
Makoto Kawai, Annaka, JP;
Atsuo Ito, Tokyo, JP;
Yoshihiro Kubota, Annaka, JP;
Kouichi Tanaka, Annaka, JP;
Yuji Tobisaka, Annaka, JP;
Hiroshi Tamura, Annaka, JP;
Shoji Akiyama, Annaka, JP;
Makoto Kawai, Annaka, JP;
Atsuo Ito, Tokyo, JP;
Yoshihiro Kubota, Annaka, JP;
Kouichi Tanaka, Annaka, JP;
Yuji Tobisaka, Annaka, JP;
Hiroshi Tamura, Annaka, JP;
Shin—Etsu Chemical Co., Ltd., Tokyo, JP;
Abstract
A method for easily manufacturing a transparent SOI substrate having: a main surface with a silicon film formed thereon; and a rough main surface located on a side opposite to a side where the silicon film is formed. A method for manufacturing transparent SOI substrate, having a silicon film formed on a first main surface of the transparent insulating substrate, while a second main surface of the transparent insulating substrate, an opposite to the first main surface, is roughened. The method includes at least the steps of: roughening the first main surface with an RMS surface roughness lower than 0.7 nm and the second main surface with an RMS surface roughness higher than the surface roughness of the first main surface to prepare the transparent insulating substrate; and forming the silicon film on the first main surface of the transparent insulating substrate.