The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2012
Filed:
Apr. 10, 2009
Yuji Tobisaka, Gunma, JP;
Yoshihiro Kubota, Gunma, JP;
Atsuo Ito, Tokyo, JP;
Kouichi Tanaka, Gunma, JP;
Makoto Kawai, Gunma, JP;
Shoji Akiyama, Gunma, JP;
Hiroshi Tamura, Gunma, JP;
Yuji Tobisaka, Gunma, JP;
Yoshihiro Kubota, Gunma, JP;
Atsuo Ito, Tokyo, JP;
Kouichi Tanaka, Gunma, JP;
Makoto Kawai, Gunma, JP;
Shoji Akiyama, Gunma, JP;
Hiroshi Tamura, Gunma, JP;
Shin-Etsu Chemical Co., Ltd., , JP;
Abstract
Provided is a method for manufacturing a bonded wafer with a good thin film over the entire substrate surface, especially in the vicinity of the lamination terminal point. The method for manufacturing a bonded wafer comprises at least the following steps of: forming an ion-implanted region by implanting a hydrogen ion or a rare gas ion, or the both types of ions from a surface of a first substrate which is a semiconductor substrate; subjecting at least one of an ion-implanted surface of the first substrate and a surface of a second substrate to be attached to a surface activation treatment; laminating the ion-implanted surface of the first substrate and the surface of the second substrate in an atmosphere with a humidity of 30% or less and/or a moisture content of 6 g/mor less; and a splitting the first substrate at the ion-implanted region so as to reduce thickness of the first substrate, thereby manufacturing a bonded wafer with a thin film on the second substrate.