Hiroshi Okamura

Title: Hiroshi Okamura: Semiconductor Device Inventions

Introduction

Hiroshi Okamura is an inventor associated with Ibaraki, Japan. His patent work focuses on semiconductor device manufacturing, including barrier metals, insulating films, and wiring structures. He is credited with 2 patents.

Latest Patents

Okamura’s listed patents address materials and processes used to manufacture semiconductor devices.

- **Semiconductor device and method of manufacturing the same.** This invention aims to provide a semiconductor device with a barrier metal that offers strong adhesion and effective diffusion-barrier properties. The manufacturing method forms a silicon-containing first layer on a base substance, forms a metal- and nitrogen-containing second layer over it, and exposes the second layer to plasma-generated active species in an atmosphere containing reducing gas.

- **Method for manufacturing semiconductor device.** This method forms a porous insulating film on a substrate and creates an opening in the film. A gas supplying silicon or carbon is then introduced to replenish deficient elements in the insulating film. Finally, the opening, including a barrier metal, is filled with a conductive material to create a wiring structure.

Career Highlights

Okamura’s listed company affiliations include Fujitsu Corporation and NEC Electronics Corporation. His patent descriptions reflect work on semiconductor fabrication techniques, particularly the formation of barrier layers and the preparation of insulating films for conductive wiring.

Collaborations

Akira Furuya and Shinichi Ogawa are identified as Okamura’s coworkers.

Conclusion

Hiroshi Okamura’s two listed patents concern semiconductor manufacturing processes designed to improve barrier-metal performance and support reliable wiring structures.