The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 03, 2007

Filed:

Jun. 16, 2004
Applicants:

Nobuyuki Ohtsuka, Ibaraki, JP;

Akira Furuya, Ibaraki, JP;

Shinichi Ogawa, Osaka, JP;

Hiroshi Okamura, Ibaraki, JP;

Inventors:

Nobuyuki Ohtsuka, Ibaraki, JP;

Akira Furuya, Ibaraki, JP;

Shinichi Ogawa, Osaka, JP;

Hiroshi Okamura, Ibaraki, JP;

Assignee:

Fujitsu Limited, Kawasaki-Shi, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a method for manufacturing a semiconductor device, an insulating film having pores is formed on a substrate, and an opening is formed in the insulating film. Thereafter, a material gas supplying Si or C is supplied to the insulating film. Thereby, deficient elements, such as Si or C, are supplied to the insulating film. Thereafter, the opening, including a barrier metal, is filled with a conductive member to form a wiring structure.


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Ohtsuka, Nobuyuki. (2007). Method for manufacturing semiconductor device (U.S. Patent No. 7199044). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7199044

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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