The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7737037 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 15, 2010

Filed:

Jul. 23, 2008
Applicants:

Akira Furuya, Kanagawa, JP;

Nobuyuki Otsuka, Ibaraki, JP;

Hiroshi Okamura, Ibaraki, JP;

Shinichi Ogawa, Ibaraki, JP;

Inventors:

Akira Furuya, Kanagawa, JP;

Nobuyuki Otsuka, Ibaraki, JP;

Hiroshi Okamura, Ibaraki, JP;

Shinichi Ogawa, Ibaraki, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

An object of the invention is to provide a semiconductor device which includes a barrier metal having high adhesiveness and diffusion barrier properties and a method of manufacturing the semiconductor device. The invention provides a semiconductor device manufacturing method including forming a first layer made of a material containing silicon on a base substance; forming a second layer containing metal and nitrogen on the first layer; and exposing the second layer to active species obtained from plasma in an atmosphere including reducing gas.


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Furuya, Akira. (2010). Semiconductor device and method of manufacturing the same (U.S. Patent No. 7737037). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7737037

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