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For the Inventor, By the Inventor

Tokyo, Japan

Hiroshi Mochizuki

USPTO Granted Patents = 15 

 

Average Co-Inventor Count = 4.1

ph-index = 10

Forward Citations = 267(Granted Patents)


Location History:

  • Tokyo, JP (1993 - 2004)
  • Musashino, JP (1993 - 2006)

Company Filing History:

goldMedal12 out of 52,711 
 
Kabushiki Kaisha Toshiba
 patents
silverMedal3 out of 227 
 
Mochida Pharmaceutical Co., Ltd.
 patents
bronzeMedal1 out of 10 
 
Dojindo Laboratories
 patents
where one patent can have more than one assignee

Years Active: 1993-2006

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15 patents (USPTO):Explore Patents
1. 6982444 - Ferroelectric memory device having a hydrogen barrier film (2006-01-03),
2. 6750093 - Semiconductor integrated circuit and method for manufacturing the same (2004-06-15),
3. 6699726 - Semiconductor device and method for the manufacture thereof (2004-03-02),
4. 6586790 - Semiconductor device and method for manufacturing the same (2003-07-01),
5. 6521927 - Semiconductor device and method for the manufacture thereof (2003-02-18),
6. 6511877 - Semiconductor integrated circuit and method for manufacturing the same (2003-01-28),
7. 6303958 - Semiconductor integrated circuit and method for manufacturing the same (2001-10-16),
8. 6190957 - Method of forming a ferroelectric device (2001-02-20),
9. 5990507 - Semiconductor device having ferroelectric capacitor structures (1999-11-23),
10. 5679973 - Lateral hall element (1997-10-21),
11. 5594112 - Acridinium compounds and conjugates thereof (1997-01-14),
12. 5548151 - Hall element for detecting a magnetic field perpendicular to a substrate (1996-08-20),
13. 5438139 - Acridinium compounds and conjugates thereof (1995-08-01),
14. 5262526 - Fluorescent compound, complex, reagent, and specific binding assay (1993-11-16),
15. 5198880 - Semiconductor integrated circuit and method of making the same (1993-03-30),

Title: Hiroshi Mochizuki: Innovator in Semiconductor Technology

Introduction

Hiroshi Mochizuki is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 15 patents. His work focuses on advancements in ferroelectric memory devices and integrated circuits.

Latest Patents

One of his latest patents is for a ferroelectric memory device that incorporates a hydrogen barrier film. This innovative semiconductor device features a ferroelectric capacitor formed on a semiconductor substrate covered with an insulator film. The capacitor consists of a bottom electrode, a ferroelectric film, and a top electrode, with the ferroelectric film designed to prevent hydrogen diffusion in the lower layers. Another notable patent involves a semiconductor integrated circuit that includes a ferroelectric capacitor, which is intricately designed with multiple insulation films and electrodes to enhance performance.

Career Highlights

Throughout his career, Hiroshi Mochizuki has worked with notable companies such as Kabushiki Kaisha Toshiba and Mochida Pharmaceutical Co., Ltd. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Hiroshi has collaborated with talented individuals in his field, including Hiroyuki Kanaya and Kumi Okuwada. These partnerships have contributed to the advancement of his research and the successful development of his patents.

Conclusion

Hiroshi Mochizuki's contributions to semiconductor technology through his innovative patents have established him as a key figure in the industry. His work continues to influence advancements in memory devices and integrated circuits.

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