The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 1996

Filed:

Feb. 07, 1995
Applicant:
Inventors:

Hideyuki Funaki, Tokyo, JP;

Hiroshi Mochizuki, Tokyo, JP;

Ryoji Maruyama, Kanagawa-ken, JP;

Kanae Fujii, Kanagawa-ken, JP;

Assignee:

Kabushiki Kaisha Toshiba, Kanagawa-ken, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257421 ; 257427 ; 257515 ;
Abstract

In a Hall element, a semiconductor layer is surrounded by a first trench filled with an insulator. A first current supply portion of an n+-type semiconductor is disposed adjacent the semiconductor layer and the first trench. Second current supply portions are also disposed adjacent the semiconductor layer and the first trench and symmetrical with respect to the first current supply portion. Sensor portions of an n+-type semiconductor are disposed adjacent the semiconductor layer and the first trench at about the center between the first and second current supply portions, respectively. A magnetic flux perpendicular to the upper surface of the semiconductor layer can be detected by the foregoing arrangement.


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