Company Filing History:
5 out of 39,244 
1 out of 804 
Years Active: 1989-2011
Title: Hiroshi Kaneta: Innovator in Semiconductor Technology
Introduction
Hiroshi Kaneta is a prominent inventor based in Kawasaki, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on improving the efficiency and effectiveness of silicon wafers in semiconductor devices.
Latest Patents
One of Kaneta's latest patents is titled "Controlling oxygen precipitates in silicon wafers using infrared irradiation and heating." This innovative wafer processing method involves heating a silicon wafer containing oxygen and irradiating it with infrared rays. The process allows for the control of oxygen precipitate formation within the silicon wafer by adjusting the heating temperature and the intensity of the infrared irradiation.
Another notable patent is for a "Semiconductor device and method for fabricating the same." This invention describes a semiconductor device that includes a silicon substrate with a resistivity of 800 Ω·cm or higher and an oxygen concentration of 5×10 cm or lower. The design minimizes the vulnerability of the silicon substrate to thermal donor effects, enabling the creation of a semiconductor device with high inductance and low fabrication costs.
Career Highlights
Hiroshi Kaneta has worked with leading companies in the technology sector, including Fujitsu Corporation and Jeol Ltd. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.
Collaborations
Throughout his career, Kaneta has collaborated with notable colleagues such as Yoshimi Shirakawa and Tsutomu Ogawa. These partnerships have contributed to the advancement of his research and the successful development of his patents.
Conclusion
Hiroshi Kaneta's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His innovative approaches continue to shape the future of semiconductor devices.