The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 1994
Filed:
Mar. 05, 1992
Applicant:
Inventors:
Yoshimi Shirakawa, Kawasaki, JP;
Hiroshi Kaneta, Kawasaki, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 10 ; 437247 ; 437946 ; 148D / ;
Abstract
A semiconductor device is produced by a process for intrinsic gettering heat treatment of a silicon crystal in which the concentration of C--O complex defects destined to form seeds for oxygen precipitation in the silicon crystal is increased or an amount of oxygen precipitate in the silicon crystal is controlled, to thereby eliminate the dispersion of the amount from one crystal to another. In the heat treatment of the silicon crystal, the amount of oxygen precipitation can be controlled with a high accuracy.