Hiroki Date

Title: Hiroki Date: Innovator in Semiconductor Technology

Introduction

Hiroki Date is a notable inventor based in Tachikawa, Japan. He has made significant contributions to the field of semiconductor technology, holding two patents that showcase his innovative approach to solving complex engineering challenges.

Latest Patents

Hiroki Date's latest patents include a method for reducing agglomeration of silicon (Si) layers and a method for manufacturing semiconductor devices. The first patent addresses the issue of agglomeration in silicon layers within silicon-on-insulator (SOI) substrates. This method prevents agglomeration during the heating and temperature-raising processes by supplying a hydride gas, which dissociates before the Si layer coheres. This innovative approach allows for the termination of dangling bonds in the Si layer, enhancing the overall quality of the substrate.

The second patent focuses on the fabrication of semiconductor devices. It involves a series of steps, including cleaning the semiconductor substrate surface with fluorine radicals, performing hydrogen termination processing, and sputtering hafnium (Hf) or similar materials. These processes are conducted without exposing the substrate to the atmosphere, resulting in a capacitance-voltage (C-V) curve with reduced hysteresis and improved characteristics for MOS-FET devices.

Career Highlights

Hiroki Date is currently employed at Canon Anelva Corporation, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing methods that enhance the performance and reliability of semiconductor devices.

Collaborations

Hiroki collaborates with talented colleagues, including Junko Nakatsuru and Takuya Seino. Their combined expertise contributes to the innovative environment at Canon Anelva Corporation.

Conclusion

Hiroki Date's contributions to semiconductor technology through his patents reflect his dedication to innovation and excellence in engineering. His work not only addresses current challenges but also paves the way for future advancements in the field.