The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2010
Filed:
Nov. 02, 2009
Applicants:
Takuya Seino, Kawasaki, JP;
Manabu Ikemoto, Sagamihara, JP;
Hiroki Date, Tachikawa, JP;
Inventors:
Assignee:
Canon Anelva Corporation, Kawasaki-shi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); C23C 16/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A dielectric insulating film including HfO or the like is formed by: cleaning a surface of a semiconductor substrate by exposing the substrate surface to a fluorine radical; performing hydrogen termination processing with a fluorine radical or a hydride (SiHor the like); sputtering Hf or the like; and then performing oxidation/nitridation. These steps are carried out without exposing the substrate to atmosphere, thereby making it possible to obtain a C-V curve with less hysteresis and realize a MOS-FET having favorable device characteristics.