Canon Anelva Corporation

Hiroki Date

Takuya Seino

Manabu Ikemoto

Junko Nakatsuru

The present invention provides a method for reducing the agglomeration of a Si layer in an SOI substrate, which can prevent the agglomeration of the Si layer from occurring in a heating and temperature-raising process for the Si layer, when heating and temperature-raising the Si layer that is the outermost surface of the SOI substrate and is in an exposed state, and can prevent the agglomeration further without forming a protective film on the SOI substrate. The method for reducing the agglomeration of the Si layer in the SOI substrate is a method of supplying a hydride gas in a heating and temperature-raising process for the Si layer, when heating and temperature-raising the Si layer which is in an exposed state in the SOI substrate that has an insulation layer and the Si layer sequentially stacked on a Si substrate. In this method, the hydride gas dissociates before the Si layer coheres, at a temperature at which the Si layer does not yet start agglomeration, and terminates a dangling bond of the Si layer with a predetermined atom such as H.

Method for reducing agglomeration of Si layer, method for manufacturing semiconductor device and vacuum treatment apparatus

A dielectric insulating film including HfO or the like is formed by: cleaning a surface of a semiconductor substrate by exposing the substrate surface to a fluorine radical; performing hydrogen termination processing with a fluorine radical or a hydride (SiHor the like); sputtering Hf or the like; and then performing oxidation/nitridation. These steps are carried out without exposing the substrate to atmosphere, thereby making it possible to obtain a C-V curve with less hysteresis and realize a MOS-FET having favorable device characteristics.

Growing community of inventors

Tachikawa, Japan

Hiroki Date