Yokohama, Japan

Hiroki Chaen

This inventor holds 2 USPTO granted patents and 1 published patent application. Top assignee: Ngk Insulators, Inc.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiroki Chaen. Retrieved from https://idiyas.com/inventor/hiroki-chaen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 2 

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2026

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2 patents (USPTO):Explore Patents

Title: Hiroki Chaen: Innovator in EUV Technology

Introduction

Hiroki Chaen is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of extreme ultraviolet (EUV) technology. With a total of 2 patents, his work focuses on developing advanced materials for EUV applications.

Latest Patents

Chaen's latest patents include an EUV transmissive film that boasts an EUV transmittance of 80.0% or more at a wavelength of 13.5 nm. This innovative membrane features a main layer with an infrared (IR) emissivity of 2.0% or more at a wavelength of 2 μm, along with a protective layer that covers at least one side of the main layer and has an IR transmittance of 70% or more at a wavelength of 2 μm. Another notable patent is an EUV transmissive membrane composed of a main layer made of metallic beryllium, which is covered by a protective layer made of beryllium nitride.

Career Highlights

Hiroki Chaen is currently employed at NGK Insulators, Inc., where he continues to push the boundaries of EUV technology. His work has been instrumental in advancing the capabilities of EUV systems, which are critical for the semiconductor manufacturing industry.

Conclusion

Hiroki Chaen's contributions to EUV technology through his innovative patents highlight his role as a key inventor in this field. His work not only enhances the performance of EUV systems but also paves the way for future advancements in semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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