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For the Inventor, By the Inventor

Tokorozawa, Japan

Hirokazu Saito

This inventor holds 14 USPTO granted patents, primarily in Semiconductor Memory. Top assignees: Hitachi, Ltd., Hitachi Vlsi Engineering Corp., Hitachi Ulsi Systems Co., Ltd.. Active years: 1996-2009.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hirokazu Saito. Retrieved from https://idiyas.com/inventor/hirokazu-saito-gr778q6q

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 14

% Patents Active = 57.1

Average Co-Inventor Count = 23.0

ph-index = 6

Forward Citations = 111(Granted Patents)


Company Filing History:

goldMedal13 out of 42,743 
 
Hitachi, Ltd.
 patents
silverMedal5 out of 182 
 
Hitachi Vlsi Engineering Corp.
 patents
bronzeMedal3 out of 336 
 
Hitachi Ulsi Systems Co., Ltd.
 patents
4. 1 out of 834,601 
Other
 patents
where one patent can have more than one assignee

Years Active: 1996-2009

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Areas of Expertise:
Semiconductor Memory Device
Defect Remedying
Bonding Pad Arrangement
Voltage Generating Circuit
Memory Architecture
Integrated Circuits
Data Storage
Circuit Design
Semiconductor Substrate
Zigzag Configuration
14 patents (USPTO):Explore Patents
1. 7499340 - Semiconductor memory device and defect remedying method thereof (2009-03-03),
2. 7345929 - Semiconductor memory device and defect remedying method thereof (2008-03-18),
3. 7203101 - Semiconductor memory device and defect remedying method thereof (2007-04-10),
4. 7016236 - Semiconductor memory device and defect remedying method thereof (2006-03-21),
5. 6898130 - Semiconductor memory device and defect remedying method thereof (2005-05-24),
6. 6657901 - Semiconductor device formed in a rectangle region on a semiconductor substrate including a voltage generating circuit (2003-12-02),
7. 6515913 - Semiconductor memory device and defect remedying method thereof (2003-02-04),
8. 6335884 - Semiconductor memory device and defect remedying method thereof (2002-01-01),
9. 6212089 - Semiconductor memory device and defect remedying method thereof (2001-04-03),
10. 6160744 - Semiconductor memory device and defect remedying method thereof (2000-12-12),
11. 6049500 - Semiconductor memory device and defect remedying method thereof (2000-04-11),
12. 5854508 - Semiconductor memory device having zigzag bonding pad arrangement (1998-12-29),
13. 5602771 - Semiconductor memory device and defect remedying method thereof (1997-02-11),
14. 5579256 - Semiconductor memory device and defect remedying method thereof (1996-11-26),

Title: Hirokazu Saito: Pioneering Inventor from Tokorozawa

Introduction: Hirokazu Saito is a renowned inventor hailing from Tokorozawa, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Hirokazu Saito's latest patents include advancements in artificial intelligence algorithms for autonomous vehicles and innovative solutions for renewable energy storage systems.

Career Highlights: Throughout his illustrious career, Hirokazu Saito has received numerous accolades for his inventive spirit, including the prestigious Inventor of the Year award in Japan for his revolutionary work in robotics.

Collaborations: Hirokazu Saito has collaborated with leading research institutions and tech companies worldwide, fostering a culture of innovation and knowledge-sharing in the global scientific community.

Conclusion: Hirokazu Saito's dedication to pushing the boundaries of technology and his passion for creating a sustainable future through innovation continue to inspire generations of inventors around the world.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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