This inventor holds 3 USPTO granted patents. Top assignee: Ngk Insulators, Inc.. Active years: 2025-2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2025-2026
Title: Hirohisa Ogawa: Innovator in AlN Single Crystal Substrates
Introduction
Hirohisa Ogawa is a notable inventor based in Kitanagoya, Japan. He has made significant contributions to the field of materials science, particularly in the development of aluminum nitride (AlN) single crystal substrates. With a total of 3 patents to his name, Ogawa's work is recognized for its innovative approaches and technical advancements.
Latest Patents
Ogawa's latest patents focus on the design and structure of AlN single crystal substrates. The first patent describes an AlN single crystal substrate with a three-layer structure. This structure is designed to optimize defect density, with the second layer exhibiting a defect density that is ten times greater than that of the first and third layers. The second patent presents an AlN single-crystal substrate in a circular shape, which is divided into three distinct regions. These regions are characterized by varying dislocation densities, satisfying the relationship Dm > Dp > Dc, where Dm is the dislocation density of the middle section, Dp is that of the outer circumferential section, and Dc is that of the central section.
Career Highlights
Hirohisa Ogawa is currently employed at NGK Insulators, Inc., where he continues to push the boundaries of innovation in materials science. His work has not only advanced the understanding of AlN substrates but has also contributed to their practical applications in various industries.
Collaborations
Ogawa has collaborated with several esteemed colleagues, including Morimichi Watanabe and Hiroharu Kobayashi. These collaborations have fostered a productive environment for research and development, leading to significant advancements in their field.
Conclusion
Hirohisa Ogawa's contributions to the field of AlN single crystal substrates exemplify the spirit of innovation and dedication to scientific advancement. His patents reflect a deep understanding of material properties and their applications, marking him as a key figure in the industry.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile