The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2025

Filed:

Jul. 29, 2024
Applicant:

Ngk Insulators, Ltd., Nagoya, JP;

Inventors:

Hirohisa Ogawa, Kitanagoya, JP;

Morimichi Watanabe, Nagoya, JP;

Hiroharu Kobayashi, Kasugai, JP;

Assignee:

NGK INSULATORS, LTD., Nagoya, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 3/00 (2006.01); C30B 29/40 (2006.01);
U.S. Cl.
CPC ...
C30B 29/403 (2013.01); B32B 3/00 (2013.01);
Abstract

There is provided an AlN single-crystal substrate of a circular shape with a radius r, wherein when the AlN single-crystal substrate is sectioned into three regions, the three regions being a central section, which is a region radially extending from a center of the AlN single-crystal substrate to 0.4r, a middle section, which is a region excluding the central section from a region radially extending from the center of the AlN single-crystal substrate to 0.7r, and an outer circumferential section, which is a region excluding the central section and the middle section from an entire region of the AlN single-crystal substrate, a dislocation density Dc of the central section, a dislocation density Dm of the middle section, and a dislocation density Dp of the outer circumferential section satisfy the relationship Dm>Dp>Dc.


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